Electrical properties of heat-treated C60 field effect transistor prepared on polyimide gate insulator

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 480-483

  Itoh, Eiji ^a   Higashimoto, Yusuke ^a   Miyairi, Keiichi ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Field effect transistor; Fullurene; Heat treatment; Oxygen; Polyimide

Indexed keywords

AMORPHOUS FILMS; ELECTRIC PROPERTIES; ELECTRON MULTIPLIERS; HEAT TREATING FURNACES; HEAT TREATMENT; MESFET DEVICES; OXYGEN; POLYIMIDES; POLYMERS;

AMORPHOUS; DOPING; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTOR; FIELD EFFECTS; FULLURENE; GATE INSULATORS; OXYGEN MOLECULES; PENTACENE;

FIELD EFFECT TRANSISTORS;

EID: 54249091697     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.480     Document Type: Article

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