Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

  Hilse, M ^a   Takagaki, Y ^a   Herfort, J ^a   Ramsteiner, M ^a   Herrmann, C ^a   Breuer, S ^a   Geelhaar, L ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORE SHELL STRUCTURE; DIFFUSION LENGTH; DIRECT DEPOSITION; EASY AXIS; FERROMAGNETS; GAAS; HETERO INTERFACES; HETEROSTRUCTURES; M-PLANE; MAGNETIZATION MEASUREMENTS; NANOWIRE STRUCTURES; SEMICONDUCTOR NANOWIRE; SURFACE PLANES; WURTZITES;

CRYSTAL GROWTH; ELECTRIC WIRE; MAGNETS; MANGANESE COMPOUNDS; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 70349669265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240405     Document Type: Article

References (20)

1. C. M. Lieber and Z. L. Wang, MRS Bull. 0883-7694 32, 99 (2007).
2. L. Däweritz, Rep. Prog. Phys. 0034-4885 69, 2581 (2006). 10.1088/0034-4885/69/9/R02 (Pubitemid 44304262)
3. M. Ramsteiner, H. Y. Hao, A. Kawaharazuka, H. J. Zhu, M. Kästner, R. Hey, L. Däweritz, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 0163-1829 66, 081304 (2002). 10.1103/PhysRevB.66.081304
4. P. Landeros, O. J. Suarez, A. Cuchillo, and P. Vargas, Phys. Rev. B 0163-1829 79, 024404 (2009). 10.1103/PhysRevB.79.024404
5. J. C. Harmand, G. Patriarche, N. Ṕŕ-Laperne, M. -N. Ḿrat-Combes, L. Travers, and F. Glas, Appl. Phys. Lett. 0003-6951 87, 203101 (2005). 10.1063/1.2128487
6. V. Schmidt, P. C. McIntyre, and U. Gösele, Phys. Rev. B 0163-1829 77, 235302 (2008). 10.1103/PhysRevB.77.235302
7. D. K. Satapathy, B. Jenichen, W. Braun, V. M. Kaganer, L. Däweritz, and K. H. Ploog, J. Phys. D 0022-3727 38, A164 (2005). 10.1088/0022-3727/38/10A/ 031
8. T. Suzuki and H. Ido, J. Phys. Soc. Jpn. 0031-9015 51, 3149 (1982). 10.1143/JPSJ.51.3149
9. Y. G. Tsui and T. W. Clyne, Thin Solid Films 0040-6090 306, 23 (1997). 10.1016/S0040-6090(97)00199-5
10. Similar idea was independently presented in C. T. Foxon, S. V. Novikov, J. L. Hall, R. P. Campion, D. Cherns, I. Griffiths, and S. Khongphetsak, J. Cryst. Growth 0022-0248 311, 3423 (2009). 10.1016/j.jcrysgro.2009.04.021
11. This corresponds to the condition of nanowires covering the whole surface in the flux incidence direction: (2r) (L sin) = ρ -1.
12. V. G. Dubrovski, N. V. Sibirev, J. C. Harmand, and F. Glas, Phys. Rev. B 0163-1829 78, 235301 (2008). 10.1103/PhysRevB.78.235301
13. The direct deposition explains the puzzle that nanowires can grow longer than the diffusion length.
14. N. Begum, M. Piccin, F. Jabeen, G. Bais, S. Rubini, F. Martelli, and A. S. Bhatti, J. Appl. Phys. 0021-8979 104, 104311 (2008). 10.1063/1.3026726
15. G. D. Mahan, R. Gupta, Q. Xiong, C. K. Adu, and P. C. Eklund, Phys. Rev. B 0163-1829 68, 073402 (2003) 10.1103/PhysRevB.68.073402; D. Spirkoska, G. Abstreiter, and A. Fontcuberta i Morral, Nanotechnology 0957-4484 19, 435704 (2008). 10.1088/0957-4484/19/43/435704
16. D. G. Ramlan, S. J. May, J. Zheng, J. E. Allen, B. W. Wessels, and L. J. Lauhon, Nano Lett. 1530-6984 6, 50 (2006). 10.1021/nl0519276 (Pubitemid 43166102)
17. For our GaAs nanowires we have observed no evidence for the transition in the sidewall facet orientation during growth reported in M. C. Plante and R. R. LaPierre, J. Cryst. Growth 0022-0248 310, 356 (2008). 10.1016/j.jcrysgro.2007. 10.050 (Pubitemid 350297270)
18. A. Trampert, Physica E (Amsterdam) 1386-9477 13, 1119 (2002). 10.1016/S1386-9477(02)00317-X (Pubitemid 34648895)
19. A. Fontcuberta i Morral, D. Spirkoska, J. Arbiol, M. Heigoldt, J. R. Morante, and G. Abstreiter, Small 1613-6810 4, 899 (2008). 10.1002/smll. 200701091
20. M. I. McMahon and R. J. Nelmes, Phys. Rev. Lett. 0031-9007 95, 215505 (2005). 10.1103/PhysRevLett.95.215505