Heteroepitaxy of dissimilar materials: Effect of interface structure on strain and defect formation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1119-1125

  Trampert, Achim ^a  

^a PD Institut fur Festkorperelektronik   (Germany)

Author keywords

Coincidence lattice model; Heteroepitaxy; Interface structure

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL SYMMETRY; INTERFACES (MATERIALS); LATTICE CONSTANTS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

DEFECT FORMATION;

EPITAXIAL GROWTH;

EID: 0036493080     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00317-X     Document Type: Conference Paper

References (9)