ZnO nanowire arrays grown on Al:ZnO buffer layers and their enhanced electron field emission

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Chen, Z H ^a   Tang, Y B ^a   Liu, Y ^a   Yuan, G D ^a   Zhang, W F ^a   Zapien, J A ^a   Bello, I ^a   Zhang, W J ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; AL-DOPED ZNO; AZO FILMS; ELECTRON EMISSION CURRENTS; ELECTRON FIELD EMISSION; GROWTH CONDITIONS; POLYCRYSTALLINE; SI SUBSTRATES; THRESHOLD FIELDS; TIME STABILITY; ZNO BUFFER LAYER; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES;

ALUMINUM; BUFFER LAYERS; ELECTRIC WIRE; ELECTRONS; FIELD EMISSION; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

FIELD EMISSION DISPLAYS;

EID: 70349635831     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3213091     Document Type: Article

References (32)

1. R. S. Chen, Y. S. Huang, Y. M. Liang, C. S. Hsieh, D. S. Tsai, and K. K. Tiong, Appl. Phys. Lett. 0003-6951 84, 1552 (2004). 10.1063/1.1655703
2. W. J. Zhang, Y. Wu, C. Y. Chan, W. K. Wong, X. M. Meng, I. Bello, Y. Lifshitz, and S. T. Lee, Diamond Relat. Mater. 0925-9635 13, 1037 (2004). 10.1016/j.diamond.2003.10.007 (Pubitemid 38616414)
3. W. A. de Heer, A. Châtelain, and D. Ugarte, Science 0036-8075 270, 1179 (1995). 10.1126/science.270.5239.1179
4. Y. B. Tang, H. T. Cong, and H. M. Cheng, Appl. Phys. Lett. 0003-6951 89, 253112 (2006). 10.1063/1.2416050 (Pubitemid 46035187)
5. M. Bonard, J. P. Salvetat, T. Stockli, W. A. de Heer, L. Forro, and A. Chatelain, Appl. Phys. Lett. 0003-6951 73, 918 (1998). 10.1063/1.122037 (Pubitemid 128671711)
6. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 0036-8075 291, 1947 (2001). 10.1126/science.1058120 (Pubitemid 32216991)
7. M. H. Huang, Y. Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. (Weinheim, Ger.) 0935-9648 13, 113 (2001). 10.1002/1521-4095(200101)13: 2<113::AID-ADMA113<3.0.CO;2-H
8. Y. Liu, Z. H. Chen, Z. H. Kang, I. Bello, X. Fan, I. Shafiq, W. J. Zhang, and S. T. Lee, J. Phys. Chem. C 1932-7447 112, 9214 (2008). 10.1021/jp800907g
9. S. H. Jo, J. Y. Lao, Z. F. Ren, R. A. Farrer, T. Baldacchini, and J. T. Fourkas, Appl. Phys. Lett. 0003-6951 83, 4821 (2003). 10.1063/1.1631735
10. M. K. Li, D. Z. Wang, Y. W. Ding, X. Y. Guo, D. Sheng, and J. Hong, Mater. Sci. Eng., A 0921-5093 452, 417 (2007). 10.1016/j.msea.2006.10.089 (Pubitemid 46317147)
11. X. D. Wang, J. Zhou, C. S. Lao, J. H. Song, N. S. Xu, and Z. L. Wang, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 1627 (2007). 10.1002/adma.200602467 (Pubitemid 47153142)
12. H. Y. Yang, S. P. Lau, S. F. Yu, L. Huang, M. Tanemura, J. Tanaka, T. Okita, and H. H. Hng, Nanotechnology 0957-4484 16, 1300 (2005). 10.1088/0957-4484/16/8/053 (Pubitemid 40878640)
13. P. X. Gao, Y. Ding, and Z. L. Wang, Nano Lett. 1530-6984 3, 1315 (2003). 10.1021/nl034548q (Pubitemid 37209969)
14. P. X. Gao and Z. L. Wang, J. Phys. Chem. B 1089-5647 108, 7534 (2004). 10.1021/jp049657n
15. L. E. Greene, M. Law, D. H. Tan, M. Montano, J. Goldberger, G. Somorjai, and P. D. Yang, Nano Lett. 1530-6984 5, 1231 (2005). 10.1021/nl050788p (Pubitemid 41089406)
16. C. Y. Geng, Y. Jiang, Y. Yao, X. M. Meng, J. A. Zapien, C. S. Lee, Y. Lifshitz, and S. T. Lee, Adv. Funct. Mater. 1616-301X 14, 589 (2004). 10.1002/adfm.200305074
17. T. F. Chung, L. B. Luo, Z. B. He, Y. H. Leung, I. Shafiq, Z. Q. Yao, and S. T. Lee, Appl. Phys. Lett. 0003-6951 91, 233112 (2007). 10.1063/1.2811717 (Pubitemid 350234492)
18. T. F. Chung, J. A. Zapien, and S. T. Lee, J. Phys. Chem. C 1932-7447 112, 820 (2008). 10.1021/jp076618d (Pubitemid 351206057)
19. S. Agouram, J. Z. Perez, and V. M. Sanjoś, Appl. Phys. A: Mater. Sci. Process. 0947-8396 88, 83 (2007). 10.1007/s00339-007-3970-4 (Pubitemid 46753801)
20. Y. B. Tang, H. T. Cong, Z. G. Zhao, and H. M. Cheng, Appl. Phys. Lett. 0003-6951 86, 153104 (2005). 10.1063/1.1899763 (Pubitemid 40861446)
21. Q. H. Wang, T. D. Corrigan, J. Y. Dai, and R. P. H. Chang, Appl. Phys. Lett. 0003-6951 70, 3308 (1997). 10.1063/1.119146
22. Y. J. Chen, Q. H. Li, Y. X. Liang, T. H. Wang, Q. Zhao, and D. P. Yu, Appl. Phys. Lett. 0003-6951 85, 5682 (2004). 10.1063/1.1833557 (Pubitemid 40162562)
23. X. Qian, H. Liu, Y. Guo, Y. Song, and Y. Li, Nanoscale Res. Lett. 1931-7573 3, 303 (2008). 10.1007/s11671-008-9154-0
24. C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee, Appl. Phys. Lett. 0003-6951 81, 3648 (2002). 10.1063/1.1518810 (Pubitemid 35427980)
25. A. Umar, S. H. Kim, H. Lee, N. Lee, and Y. B. Hahn, J. Phys. D: Appl. Phys. 0022-3727 41, 065412 (2008). 10.1088/0022-3727/41/6/065412
26. K. J. Liao, W. L. Wang, C. Z. Cai, J. W. Lu, and C. G. Hu, J. Metastable Nanocryst. Mater. 1422-6375 23, 35 (2005). 10.4028/www.scientific.net/JMNM.23.35
27. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 0021-8979 47, 5248 (1976). 10.1063/1.322600
28. Y. L. Chueh, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, and L. J. Chen, Appl. Phys. Lett. 0003-6951 86, 133112 (2005). 10.1063/1.1883316 (Pubitemid 40564922)
29. L. Liao, J. C. Li, D. H. Liu, C. Liu, D. F. Wang, W. Z. Song, and Q. Fu, Appl. Phys. Lett. 0003-6951 86, 083106 (2005). 10.1063/1.1866504 (Pubitemid 40495300)
30. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, and L. Schlapbach, Appl. Phys. Lett. 0003-6951 76, 2071 (2000). 10.1063/1.126258
31. S. H. Jo, Y. Tu, Z. P. Huang, D. L. Carnahan, D. Z. Wang, and Z. F. Ren, Appl. Phys. Lett. 0003-6951 82, 3520 (2003). 10.1063/1.1576310
32. C. Masarapu, J. T. Ok, and B. Q. Wei, J. Phys. Chem. C 1932-7447 111, 12112 (2007). 10.1021/jp074081y (Pubitemid 47325796)