Deposition of BaHfO3 dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD

Chemical Vapor Deposition

Volumn 15, Issue 7-9, 2009, Pages 167-170

  Lupina, Grzegorz ^a   Lukosius, Mindaugas ^a   Wenger, Christian ^a   Dudek, Piotr ^a   Kozlowski, Grzegorz ^a   Müssig, Hans Joachim ^a   Abrutis, Adulfas ^b   Galvelis, Raimondas ^b   Katkus, Tomas ^b   Saltyte, Zita ^b   Kubilius, Virgaudas ^b  

^a IHP   (Germany)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZED FILMS; CUBIC PEROVSKITE; DEPOSITION TEMPERATURES; DIELECTRIC LAYER; HIGH DIELECTRIC CONSTANTS; LIQUID INJECTIONS; LIQUID-INJECTION MOCVD; METAL-ORGANIC; MICROELECTRONIC APPLICATIONS; MONOCLINIC HFO; SI (100) SUBSTRATE; SI SUBSTRATES;

BARIUM; CHEMICAL VAPOR DEPOSITION; HAFNIUM; HAFNIUM COMPOUNDS; LIQUIDS; OXIDE MINERALS; PEROVSKITE;

BARIUM COMPOUNDS;

EID: 70349615833     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200804272     Document Type: Article

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