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Volumn 21, Issue 19, 2009, Pages 1390-1392

Low-current N-type quantum dash semiconductor optical amplifiers

Author keywords

Donor doping; Low current; Quantum dash; Semiconductor optical amplifier (SOA)

Indexed keywords

APPLIED CURRENT; DONOR CONCENTRATIONS; DONOR DOPING; LOW CURRENT; LOW-POWER DISSIPATION; N-TYPE DOPING; OPTICAL GAIN SPECTRA; QUANTUM DASH; QUANTUM DASHES; SEMICONDUCTOR OPTICAL AMPLIFIER (SOA); SLOPE EFFICIENCIES;

EID: 70349603559     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2027442     Document Type: Article
Times cited : (6)

References (11)
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  • 3
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    • O. Qasaimeh, "Ultra-fast gain recovery and compression due to Augerassisted relaxation in quantum dot semiconductor optical amplifiers," J. Lightw. Technol., vol. 27, no. 13, pp. 2530-2536, Jul. 1, 2009.
    • (2009) J. Lightw. Technol , vol.27 , Issue.13 , pp. 2530-2536
    • Qasaimeh, O.1
  • 5
    • 33747616203 scopus 로고    scopus 로고
    • Wideband quantum-dash-in-well superluminescent diode at 1.6 μm
    • Aug. 15
    • H. S. Djie, C. E. Dimas, and B. S. Ooi, "Wideband quantum-dash-in-well superluminescent diode at 1.6 μm," IEEE Photon. Technol. Lett., vol. 18, no. 16, pp. 1747-1749, Aug. 15, 2006.
    • (2006) IEEE Photon. Technol. Lett , vol.18 , Issue.16 , pp. 1747-1749
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  • 9
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    • Anisotropy of carrier transport in the active region of lasers with self-assembled InAs quantum dashes
    • Nov. 15
    • D. P. Popescu and K. J. Malloy, "Anisotropy of carrier transport in the active region of lasers with self-assembled InAs quantum dashes," IEEE Photon. Technol. Lett., vol. 18, no. 22, pp. 2401-2403, Nov. 15, 2006.
    • (2006) IEEE Photon. Technol. Lett , vol.18 , Issue.22 , pp. 2401-2403
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    • Numerical modeling of the emission characteristics of semiconductor quantum dash materials for lasers and optical amplifiers
    • Apr
    • M. Gioannini, "Numerical modeling of the emission characteristics of semiconductor quantum dash materials for lasers and optical amplifiers," IEEE J. Quantum Electron., vol. 40, no. 4, pp. 364-373, Apr. 2004.
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    • Gioannini, M.1
  • 11
    • 33751361645 scopus 로고    scopus 로고
    • DC and dynamic characteristics of P-doped and tunnel injection 1.65-μm InAs quantum-dash lasers grown on InP
    • Dec
    • Z. Mi and P. Bhattacharya, "DC and dynamic characteristics of P-doped and tunnel injection 1.65-μm InAs quantum-dash lasers grown on InP(001)," IEEE J. Quantum Electron., vol. 42, no. 12, pp. 1224-1232, Dec. 2006.
    • (2006) IEEE J. Quantum Electron , vol.42 , Issue.12 , pp. 1224-1232
    • Mi, Z.1    Bhattacharya, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.