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Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2082-2086

InGaN self-organized quantum dots grown by metalorganic chemical vapour deposition (MOCVD)

(4) Wang, L S a Chua, S J a,b Zang, K Y b Tripathy, S a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b SINGAPORE MIT ALLIANCE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; AVERAGE DIAMETER; DOT DENSITY; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MICROPHOTOLUMINESCENCE; ROOM TEMPERATURE; SELF-ORGANIZED QUANTUM DOTS;

ATOMIC FORCE MICROSCOPY; DEPOSITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; NITRIDES; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; VAPORS;

ALUMINUM NITRIDE;

EID: 84875120798 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303443 Document Type: Conference Paper

Times cited : (8)

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