Fabrication and characterization of self-assembled InGaN quantum dots by periodic interruption growth

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 2, 2008, Pages 300-304

  Choi, Seung Kyu ^a   Jang, Jae Min ^a   Jhin, Jung Keun ^b   Jung, Woo Gwang ^a  

^a Kookmin University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A DENSITIES; AMMONIA GASES; HIGH DENSITIES; INGAN QUANTUM DOTS; LATERAL SIZES; METAL ORGANIC; OPTICAL CHARACTERISTICS; PERIODIC; SOURCE MATERIALS; TIME PERIODS;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PERIODIC STRUCTURES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 54849437590     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723369     Document Type: Article

References (23)

1. X. Mei, M Blumin, M. Sun, D. Kim, Z. H. Wu, H. E. Ruda, and Q. X. Guo, Appl. Phys. Lett. 82, 967 (2003).
2. B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Kashiwaba, and K. Haga, Nanotechnology 15, S382 (2004).
3. W.-G. Jung, S.-H. Jung, P. Kung, and M. Razeghi, Nanotechnology 17, 54 (2006).
4. Y. Arakawa, T. Someya, and K. Tachibana, phys. stat. sol. (b)224, 1 (2001).
5. C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, and G. Fishman, Appl. Phys. Lett. 76, 1570 (2000).
6. H.-J. Choi, J.-C. Johnson, R. He, S.-K. Lee, F. Kim, P. Pauzauskie, J. Goldberger, R. J. Saykally, and P. Yang, J. Phys. Chem. B 107, 8721 (2003).
7. S. Nakamura, M Senoh, and T. Mukai, Jpn. J. Appl. Phys. 30, L1708 (1991).
8. J. P. Chang, T. Y. Lin, H. F. Hong, T. C. Gung, J. L. Shen, and Y. F. Chen, phys. stat. sol. (c) 1, 2466 (2004).
9. S. Nakamura, M. Senoh, S. Nagahama, N. Iwase, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Jpn. J. Appl. Phys. Part 2 36, L1059 (1997).
10. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
11. K. Tachibana, T. Someya, and Y. Arakawa, phys. stat. sol. (a) 176, 629 (1999).
12. Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang, and K. T. Lam, Semicond. Sci. Technol. 19, 389 (2004).
13. K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel, Appl. Phys. Lett. 75, 2605 (1999).
14. R. W. Martin, P. R. Edwards, R. A. Taylor, J. H. Rice, J. H. Na, J. W. Robinson, J. D. Smith, C. Liu, and I. M. Watson, phys. stat. sol. (a) 202, 372 (2005).
15. D. M. Graham, A. S. Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton, J. S. Barnard, C. J. Humphreys, and E. J. Thrush, phys. stat. sol. (b) 240, 344 (2003).
16. H. H. Yao, T. C. Lu, G. S. Huang, C. Y. Chen, W. D. Liang, H. C. Kuo, and S. C. Wang, Nanotechnology 17, 1713 (2006).
17. Y. Arakawa, phys. stat. sol. (a) 188, 37 (2001).
18. B. Sherliker, M. P. Halsall, P. D. Buckle, P. J. Parbrook, and T. Wang, Appl. Phys. Lett. 88, 122115 (2006).
19. R. A. Oliver, G. A. D. Briggs, M. J. Kappers, C. J. Humphreys, S. Yasin, J. H. Rice, J. D. Smith, and R. A. Taylor, Appl. Phys. Lett. 83, 755 (2003).
20. K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel, phys. stat. sol. (b) 243, 1661 (2006).
21. H. Hirayama, S. Tanaka, and Y. Aoyagi, Microelectron. Eng. 49, 287 (1999).
22. B. P. Keller, S. Keller, D. Kapolnek, W. M. Jiang, Y. F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. Denbars, J. Electron. Mater. 24, 1707 (1995).
23. B. Damilano, N. Grandjean, F. Semond, J. Semond, J. Massies, and M. Lerous, Appl. Phys. Lett. 75, 962 (1999).