Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 10, 2007, Pages 3509-3513

  Fujii, Katsushi ^a   Fujimoto, Gakuyo ^a   Goto, Takenari ^a   Yao, Takafumi ^a,b   Hoshino, Naruhiro ^a   Kagamitani, Yuji ^a   Ehrentraut, Dirk ^a   Fukuda, Tsuguo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIC AMMONOTHERMAL METHOD; DEEP EMISSION; DEEP-LEVEL LUMINESCENCE; DONOR-ACCEPTOR PAIRS; TWO-LEVEL TRANSITION;

LUMINESCENCE; PHASE TRANSITIONS; THERMAL EFFECTS;

GALLIUM NITRIDE;

EID: 35349031773     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723188     Document Type: Article

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