Status and perspectives of the ammonothermal growth of GaN substrates

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 876-880

  Hashimoto, Tadao ^a,b   Wu, Feng ^a,b   Saito, Makoto ^c   Fujito, Kenji ^c   Speck, James S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B1. Semiconducting gallium compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GROWTH FROM SOLUTIONS; SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 39249083544     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.088     Document Type: Article

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