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Volumn 106, Issue 5, 2009, Pages

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors

(9) Byrum, L E a Ariyawansa, G a Jayasinghe, R C a Dietz, N a Perera, A G U a Matsik, S G b Ferguson, I T c Bezinger, A d Liu, H C d

a GEORGIA STATE UNIVERSITY (United States)

b NDP Optronics LLC (United States)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

d NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ANALYSIS TECHNIQUES; CAPACITANCE VOLTAGE; DONOR IMPURITIES; DUAL-BAND DETECTOR; ELECTRICAL BEHAVIORS; FREQUENCY MEASUREMENTS; HETEROSTRUCTURES; INFRARED SPECTRUM; INTERFACE TRAP STATE; NEGATIVE CAPACITANCE; OPTICAL ANALYSIS; TRAP STATE;

ACTIVATION ANALYSIS; CAPACITANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; IMPURITIES; INFRARED SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM; SILICON;

ACTIVATION ENERGY;

EID: 70349334621 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211292 Document Type: Article

Times cited : (15)

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