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Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

AlGaAs emitterGaAs barrier terahertz detector with a 2.3 THz threshold

(6) Rinzan, M B M a Perera, A G U a,b Matsik, S G b Liu, H C c Wasilewski, Z R c Buchanan, M c

a GEORGIA STATE UNIVERSITY (United States)

b NDP Optronics LLC (United States)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING DENSITY; QUANTUM WELL PHOTODETECTORS; THRESHOLD FREQUENCY; WORK FUNCTION;

DEPOSITION; DIFFUSION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOEMISSION; QUANTUM EFFICIENCY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PHOTODETECTORS;

EID: 17044420511 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1867561 Document Type: Article

Times cited : (47)

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