Exchange enhancement of the g factor in InAs/AlSb heterostructures

Semiconductors

Volumn 42, Issue 7, 2008, Pages 828-833

  Aleshkin, V Ya ^a   Gavrilenko, V I ^a   Ikonnikov, A V ^a   Krishtopenko, S S ^a   Sadofyev, Yu G ^a   Spirin, K E ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249142437     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608070129     Document Type: Article

References (15)

1. F. F. Fang and P. J. Stiles, Phys. Rev. 174, 823 (1968).
2. T. Ando and Y. Uemura, J. Phys. Soc. Jpn. 37, 1044 (1974).
3. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
4. O. E. Raishev and P. Debray. Phys. Rev. B, 65, 085319 (2002).
5. P. R. Hammer and M. Johnson, Phys. Rev. Lett. 88, 066806 (2002).
6. Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, et al., Appl. Phys. Lett. 81, 1833 (2002).
7. V. N. Zverev, M. Muhammad, S. Rahman, et al., J. Appl. Phys. 96, 6353 (2004).
8. S. Brosig, K. Ensslin, A. G. Jansen, et al., Phys. Rev. B 61, 13045 (2000).
9. W. Zawadzki and R. Lassing, Surf. Sci. 142, 225 (1984).
10. A. Raymond, J. L. Robert, C. Bousquet, et al., Solid State Commun. 55, 271 (1985).
11. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
12. H. R. Trebin, U. Rössler, and R. Ranvaud, Phys. Rev. B 20, 686 (1979).
13. R. Winkler, Surf. Sci. 361-362, 411 (1996).
14. Z. W. Zheng, B. Shen, Y. S. Gui, et al., J. Appl. Phys. 95, 2473 (2004).
15. E. L. Ivchenko and A. A. Kiselev, Fiz. Tekh. Poluprovodn. 26, 1471 (1992) [Sov. Phys. Semicond. 26, 827 (1992)].