Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 20, 2001, Pages

  Rowe, A C H ^a   Nehls, J ^a,b   Stradling, R A ^a   Ferguson, R S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANTIMONY; ARSENIC; GALLIUM; INDIUM;

ARTICLE; ENERGY; FOURIER TRANSFORMATION; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; MEASUREMENT; QUANTUM THEORY; SEMICONDUCTOR; TEMPERATURE;

EID: 0034905910     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.201307     Document Type: Article

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