Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 527-531

  Nitta, Junsaku ^a   Akazaki, Tatsushi ^a   Takayanagi, Hideaki ^a   Enoki, Takatomo ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

InAs inserted InGaAs InAlAs heterostructure; InGaAs InAlAs heterostructure; Spin orbit interaction

Indexed keywords

EID: 0346938910     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00109-X     Document Type: Article

References (14)

1. S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665.
2. E.I. Rashba, Sov. Phys. Solid State 2 (1960) 1109.
3. Y.A. Bychov, E.I. Rashba, J. Phys. C 17 (1984) 6039.
4. G. Lommer, F. Malcher, U. Rössler, Phys. Rev. Lett. 60 (1988) 728.
5. E.A. de Andrada e Silva, G.C. La Rocca, F. Bassani, Phys. Rev. B 50 (1994) 8523.
6. J. Nitta, T. Akazaki, H. Takayanagi, T. Enoki, Phys. Rev. Lett. 78 (1997) 1335.
7. G. Engels, J. Lange, Th. Schäpers, H. Lüth, Phys. Rev. B 55 (1997) R1958.
8. T. Akazaki, K. Arai, T. Enoki, Y. Ishii, IEEE Electron Dev. Lett. 13 (1992) 325.
9. I.I. Boiko, E.I. Rashba, Sov. Phys. Solid State Phys. 2 (1960) 1692; ibid. 3 (1961) 927.
10. I.I. Boiko, E.I. Rashba, Sov. Phys. Solid State Phys. 2 (1960) 1692; ibid. 3 (1961) 927.
11. J. Luo, H. Munekata, F.F. Fang, P.J. Stiles, Phys. Rev. B 41 (1990) 7685.
12. B. Das, D.C. Miller, S. Datta, R. Reifenberger, W.P. Hong, P.K. Bhattacharya, J. Singh, M. Jaffe, Phys. Rev. B 39 (1989) 1411.
13. J.P. Heida, B.J. van Wees, T.M. Klapwijk, W. van der Graaf, G. Borghs, in: M. Scheffler, R. Zimmermann (Eds.), Proc. 23rd Int. Conf. on the Physics of Semiconductors, vol. 3, World Scientific, Singapore, 1996, p. 2467.
14. T. Akazaki, J. Nitta, H. Takayanagi, T. Enoki, K. Arai, J. Electron. Mater. 25 (1996) 745.