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Volumn 11, Issue 10, 2009, Pages 1833-1837
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Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films
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Author keywords
a SiC:H; Annealing; Oxidation; White photoluminescence
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Indexed keywords
A-SIC:H;
AMORPHOUS HYDROGENATED CARBON;
AMORPHOUS SI;
AS-DEPOSITED FILMS;
CARBON RICH;
DC MAGNETRON SPUTTERING;
DRY AND WET;
DRY OXIDATION;
EPR MEASUREMENTS;
EPR SIGNALS;
FTIR;
LIGHT-EMITTING EFFICIENCY;
METHANE GAS;
NON-RADIATIVE RECOMBINATIONS;
PHOTOEXCITED CARRIERS;
PHOTOLUMINESCENCE INTENSITIES;
PHYSICAL MECHANISM;
PURE OXYGEN;
ROOM TEMPERATURE;
SILICON CARBON ALLOYS;
SILICON TARGETS;
SPECTRAL DISTRIBUTION;
SPIN CONCENTRATION;
STRONG ENHANCEMENT;
TEMPERATURE RANGE;
THERMAL TREATMENT;
VISIBLE PHOTOLUMINESCENCE;
WHITE PHOTOLUMINESCENCE;
XPS MEASUREMENTS;
AMORPHOUS CARBON;
AMORPHOUS FILMS;
ANNEALING;
ARGON;
CARBON FILMS;
COMPOSITE MICROMECHANICS;
ELECTRON RESONANCE;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
EMISSION SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
LEAKAGE (FLUID);
LIGHT EMISSION;
METHANE;
OXIDATION;
OXYGEN;
PARAMAGNETIC RESONANCE;
PHOTOLUMINESCENCE;
QUANTUM THEORY;
SILICON ALLOYS;
SILICON CARBIDE;
AMORPHOUS SILICON;
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EID: 70349311100
PISSN: 12932558
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2009.05.030 Document Type: Article |
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Times cited : (18)
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References (18)
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