Different luminescent properties of C+-implanted SiO2 films grown by thermal oxidation and PECVD

Materials Letters

Volumn 38, Issue 5, 1999, Pages 321-325

  Zhao, J ^a   Mao, D S ^a   Lin, Z X ^a   Jiang, B Y ^a   Yu, Y H ^a   Liu, X H ^a   Yang, G Q ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

61.46.+w; 61.72.Ww; 61.80.Jh; 78.55. m; Ion implantation; Light emitting materials; Photoluminescence; Si based; SiO2 films

Indexed keywords

CARBON; CRYSTAL STRUCTURE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THERMOOXIDATION;

HIGH RESOLUTION TRANSVERSE ELECTRON MICROSCOPY (HRTEM);

SILICA;

EID: 0033097461     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(98)00182-7     Document Type: Article

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