-
1
-
-
7544227495
-
Recent Advances in avalanche photodiodes
-
J. C. Campbell, S, Demiguel, F. Ma, A. Beck, X. Guo, S. Wang, X. Zheng, X. Li, J. D. Beck, M. A. Kinch, A. Huntington, L. A. Coldren, J. Decobert and N. Tscherptner, " Recent Advances in avalanche photodiodes, " IEEE Journal of selected topics in quantum electronics 10, 777-787 (2004).
-
(2004)
IEEE Journal of selected topics in quantum electronics
, vol.10
, pp. 777-787
-
-
Campbell, J.C.1
Demiguel, S.2
Ma, F.3
Beck, A.4
Guo, X.5
Wang, S.6
Zheng, S.7
Li, X.8
Beck, J.D.9
Kinch, M.A.10
Huntington, A.11
Coldren, L.A.12
Decobert, J.13
Tscherptner, N.14
-
2
-
-
0030815488
-
High gain-bandwidth-product silicon heterointerface photo detector
-
A. R. Hawkins, W. Wu, P. Abrham, K. Streubel and J. E. Bowers, " High gain-bandwidth-product silicon heterointerface photo detector, " Applied Physics Letters 70, 303-305 (1996).
-
(1996)
Applied Physics Letters
, vol.70
, pp. 303-305
-
-
Hawkins, A.R.1
Wu, W.2
Abrham, P.3
Streubel, K.4
Bowers, J.E.5
-
3
-
-
24644476916
-
High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
-
J. F. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö mer Ilday and F. X. Kärtner, " High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform, " Applied Physics Letters 87, 103501-103503 (2005).
-
(2005)
Applied Physics Letters
, vol.87
, pp. 103501-103503
-
-
Liu, J.F.1
Michel, J.2
Giziewicz, W.3
Pan, D.4
Wada, K.5
Cannon, D.D.6
Jongthammanurak, S.7
Danielson, D.T.8
Kimerling, L.C.9
Chen, J.10
Ömer Ilday, F.11
Kärtner, F.X.12
-
4
-
-
54849239200
-
Ge/Si avalanche photodiodes for 1.3 mm optical fiber links
-
(IEEE, Piscataway, NJ, USA)
-
Y. Kang, S. Litski, G. Sarid, M. Morse, M. J. Paniccia, A. Pauchard, K. G. Gan and J. E. Bowers, " Ge/Si avalanche photodiodes for 1.3 mm optical fiber links, " in 2007 4th IEEE International Conference On Group IV Photonics (IEEE, Piscataway, NJ, USA, 2007) pp. 294-296.
-
(2007)
2007 4th IEEE International Conference On Group IV Photonics
, pp. 294-296
-
-
Kang, Y.1
Litski, S.2
Sarid, G.3
Morse, M.4
Paniccia, M.J.5
Pauchard, A.6
Gan, K.G.7
Bowers, J.E.8
-
6
-
-
41549164029
-
Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium
-
M. Caroll, K. Childs, D. Serkland, R. Jarecki, T. Bauer and K. Saiz, " Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium, " Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007, 293-298 (2007).
-
(2007)
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007
, pp. 293-298
-
-
Caroll, M.1
Childs, K.2
Serkland, D.3
Jarecki, R.4
Bauer, T.5
Saiz, K.6
-
7
-
-
36148965863
-
Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget
-
T. H. Loh, Y. Z. Xiong, S. J. Lee, M. B. Yu, G. Q. Lo and D. L. Kwong, " Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget, " IEEE Electron Device Letters 28, 984-986 (2007).
-
(2007)
IEEE Electron Device Letters
, vol.28
, pp. 984-986
-
-
Loh, T.H.1
Xiong, Y.Z.2
Lee, S.J.3
Yu, M.B.4
Lo, G.Q.5
Kwong, D.L.6
-
8
-
-
36549100005
-
Model for facet and sidewall effect formation during selective epitaxial growth of (001) silicon
-
C. I. Drowley, G. A. Reid and R. Hull, " Model for facet and sidewall effect formation during selective epitaxial growth of (001) silicon, " Applied Physics Letters 52, 546-548 (1988).
-
(1988)
Applied Physics Letters
, vol.52
, pp. 546-548
-
-
Drowley, C.I.1
Reid, G.A.2
Hull, R.3
|