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Volumn , Issue , 2009, Pages

80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODETECTORS; FUTURE APPLICATIONS; HIGH BANDWIDTH; MONOLITHIC INTEGRATION;

EID: 70349297092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (8)
  • 6
    • 41549164029 scopus 로고    scopus 로고
    • Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium
    • M. Caroll, K. Childs, D. Serkland, R. Jarecki, T. Bauer and K. Saiz, " Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium, " Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007, 293-298 (2007).
    • (2007) Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007 , pp. 293-298
    • Caroll, M.1    Childs, K.2    Serkland, D.3    Jarecki, R.4    Bauer, T.5    Saiz, K.6
  • 7
    • 36148965863 scopus 로고    scopus 로고
    • Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget
    • T. H. Loh, Y. Z. Xiong, S. J. Lee, M. B. Yu, G. Q. Lo and D. L. Kwong, " Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget, " IEEE Electron Device Letters 28, 984-986 (2007).
    • (2007) IEEE Electron Device Letters , vol.28 , pp. 984-986
    • Loh, T.H.1    Xiong, Y.Z.2    Lee, S.J.3    Yu, M.B.4    Lo, G.Q.5    Kwong, D.L.6
  • 8
    • 36549100005 scopus 로고
    • Model for facet and sidewall effect formation during selective epitaxial growth of (001) silicon
    • C. I. Drowley, G. A. Reid and R. Hull, " Model for facet and sidewall effect formation during selective epitaxial growth of (001) silicon, " Applied Physics Letters 52, 546-548 (1988).
    • (1988) Applied Physics Letters , vol.52 , pp. 546-548
    • Drowley, C.I.1    Reid, G.A.2    Hull, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.