Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 984-986

  Loh, W Y ^a   Wang, J ^a,b   Ye, J D ^a   Yang, R ^a   Nguyen, H S ^a   Chua, K T ^a   Song, J F ^a   Loh, T H ^a   Xiong, Y Z ^a   Lee, S J ^a,b   Yu, M B ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Ge on silicon; Heterojunctions; Near infrared; Optical communications; Photodetector

Indexed keywords

BUFFER LAYERS; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; HETEROJUNCTIONS; OPTICAL COMMUNICATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRAIN;

DISLOCATION DENSITY; PHOTORESPONSE;

PHOTODETECTORS;

EID: 36148965863     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906814     Document Type: Article

References (16)

1. J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J. M. Fedeli, M. Rouviere, L. Vivien, and S. Laval, "Reduced pressure-chemical vapor deposition of Ge thick layer on Si (001) for 1.3-1.55-μm photodetection," J. Appl. Phys., vol. 95, no. 10, pp. 5905-5913, May 2004.
2. J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, "Silicidation-induced band gap shrinkage in Ge epitaxial films on Si," Appl. Phys. Lett., vol. 84, no. 5, pp. 660-662, Feb. 2004.
3. Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Appl. Phys. Lett., vol. 82, no. 13, pp. 2044-2046, Mar. 2003.
4. J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett., vol. 87, no. 1, p. 011-110, Jul. 2005.
5. A. Sakai, T. Tatsumi, and K. Aoyama, "Growth of strain-relaxed Ge films on Si(001) surfaces," Appl. Phys. Lett., vol. 71, no. 24, pp. 3510-3512, Dec. 1997.
6. Y. H. Luo, J. Wan, R. L. Forrest, J. L. Liu, M. S. Goorsky, and K. L. Wang, "High-quality strain-relaxed SiGe films grown with low temperature Si buffer," J. Appl. Phys., vol. 89, no. 12, pp. 8279-8283, Jun. 2001.
7. H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett., vol. 75, no. 19, pp. 2909-2911, Nov. 1999.
8. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, and M. Cardona, "Stress-induced shifts of first-order Raman frequencies of diamond-and zinc-blende-type semiconductors," Phys. Rev. B. Condens. Matter, vol. 5, no. 2, pp. 580-593, Jan. 1972.
9. J. Zi, K. M. Zhang, and X. D. Xie, "Vibrational properties of Si/Ge superlattices," Prog. Surf. Sci., vol. 54, no. 1, pp. 69-113, Jan. 1997.
10. Y. B. Bolkhovityanov, A. K. Gutakovskii, V. I. Mashanov, O. P. Pehelyakov, M. A. Revenko, and L. V. Sokolov, "Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer," J. Appl. Phys., vol. 91, no. 7, pp. 4710-4714, Apr. 2002.
11. K. Takimoto, A. Fukuta, Y. Yamamoto, N. Yoshida, T. Itoh, and S. Nonomura, "Linear thermal expansion coefficients of amorphous and microcrystalline silicon films," J. Non-Cryst. Solids, vol. 299-302, pp. 314-317, Apr. 2002.
12. R. K. Tsui and M. Gershenson, "Plastic deformation and fracture resulting from stresses caused by differential thermal contraction in GaP/Si heterostructures," Appl. Phys. Lett., vol. 37, no. 2, pp. 218-220, Jul. 1980.
13. G. A. Slack and S. F. Bartram, "Thermal expansion of some diamondlike crystals," J. Appl. Phys., vol. 46, no. 1, pp. 89-98, Jan. 1975.
14. L. Colace, G. Masini, and G. Assanto, "Ge-on-Si approaches to the detection of near-infrared light," IEEE J. Quantum Electron., vol. 35, no. 12, pp. 1843-1852, Dec. 1999.
15. J. Oh, S. Csutak, and J. C. Campbell, "High-speed interdigitated Ge PIN photodetectors," IEEE Photon. Technol. Lett., vol. 14, no. 3, pp. 369-371, Mar. 2002.
16. N. R. Das and M. Jamal Deen, "Effect of interface trapping on the frequency response of a photodetector," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 20, no. 3, pp. 1105-1110, May 2002.