Band structure and valence-band offset of HfO2 thin film on Si substrate from photoemission spectroscopy

Applied Physics A: Materials Science and Processing

Volumn 97, Issue 2, 2009, Pages 475-479

  Tan, Tingting ^a   Liu, Zhengtang ^a   Lu, Hongcheng ^a   Liu, Wenting ^a   Yan, Feng ^a   Zhang, Wenhua ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; CONDUCTION MECHANISM; ENERGY-BAND DIAGRAM; LOW FIELD; OPTICAL TRANSMISSION SPECTRUM; PHOTOEMISSION SPECTROSCOPY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EMISSIONS; SI (100) SUBSTRATE; SI SUBSTRATES; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; UNDER GATE; VALENCE-BAND OFFSET;

BAND STRUCTURE; EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; LIGHT TRANSMISSION; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349283040     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5245-8     Document Type: Article

References (16)

1. C.J. Yim D.-H. Ko M.H. Jang K.B. Chung M.-H. Cho H.T. Jeon 2008 Appl. Phys. Lett. 92 012922
2. Q. Chen Y.P. Feng J.W. Chai Z. Zhang J.S. Pan S.J. Wang 2008 Appl. Phys. Lett. 93 052104
3. G.D. Wilk R.M. Wallance J.M. Anthony 2000 Appl. Phys. Lett. 76 112
4. G. Seguini M. Perego S. Spiga M. Fanciulli A. Dimoulas 2007 Appl. Phys. Lett. 91 192902
5. B. Peter A. Audrius P. Alfredo 2008 Appl. Phys. Lett. 92 132911
6. S. Toyoda J. Okabayashi H. Kumigashira M. Oshima K. Ono M. Niwa K. Usuda N. Hirashita 2004 J. Electron Spectrosc. Relat. Phenom. 137 141
7. E.A. Kraut R.W. Grant J.R. Waldrop S.P. Kowalczyk 1980 Phys. Rev. Lett. 44 1620
8. E.A. Kraut R.W. Grant J.R. Waldrop S.P. Kowalczyk 1983 Phys. Rev. B 28 1965
9. S. Sayan E. Garfunkel S. Suzer 2002 Appl. Phys. Lett. 80 2135
10. F.G. Bell L. Ley 1988 Phys. Rev. B 37 8383
11. J. Tauc R. Grigorovici A. Vancu 1966 Phys. Status Solidi 15 627
12. J. Robertson 2000 J. Vac. Sci. Technol. B 18 1785
13. M.H. Hakala A.S. Foster J.L. Gavartin P. Huvu M.J. Puska R.M. Nieminen 2006 J. Appl. Phys. 100 043708
14. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications (Springer, Berlin, 1997)
15. H.W. Chen F.C. Chiu C.H. Liu S.Y. Chen H.S. Huang P.C. Juan H.L. Hwang 2008 Appl. Surf. Sci. 254 6112
16. G.Q. Zha W.Q. Jie T.T. Tan W.H. Zhang F.Q. Xu 2007 J. Phys. Chem. C 111 12834