Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

IEEE Transactions on Electron Devices

Volumn 56, Issue 1, 2009, Pages 116-125

  Popadiç, Miloš ^a   Lorito, Gianpaolo ^a   Nanver, Lis K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Schottky barriers; Schottky diodes; Semiconductor device modeling; Semiconductor diodes; Semiconductor junctions

Indexed keywords

ANALYTICAL MODEL; ANOMALOUS BEHAVIOR; CROSSOVER REGIME; CROSSOVER REGIONS; ELECTRICAL CHARACTERISTIC; IV CHARACTERISTICS; JUNCTION DEPTH; MEDICI SIMULATIONS; P-N DIODE; P-N JUNCTION; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SEMICONDUCTOR DEVICE MODELING; ULTRA-SHALLOW P;

COMPUTER SIMULATION; MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; STANDARDS;

SEMICONDUCTOR JUNCTIONS;

EID: 70349162039     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2009028     Document Type: Article

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