Fabrication and characterization of active and sequential circuits utilizing schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1063-1069

  Zhao, Hong Quan ^a   Kasai, Seiya ^a,b   Hashizume, Tamotsu ^a   Wu, Nan Jian ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Flip flop (FF); GaAs hexagonal nanowire network; Ring oscillator; Schottky wrap gate (WPG)

Indexed keywords

DIGITAL DEVICES; FABRICATION; FIELD EFFECT TRANSISTORS; FLIP FLOP CIRCUITS; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; SEQUENTIAL CIRCUITS; TIMING CIRCUITS;

D-TYPE FLIP FLOPS; FABRICATION AND CHARACTERIZATIONS; FIELD EFFECT TRANSISTOR (FETS); HEXAGONAL RINGS; NANOWIRE NETWORKS; RING OSCILLATOR; SCHOTTKY WRAP GATES; SET-RESET FLIP-FLOP;

OSCILLATORS (ELECTRONIC);

EID: 67649368883     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1063     Document Type: Article

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