Microwave rectification in ballistic nanojunctions at room temperature

Microelectronic Engineering

Volumn 63, Issue 1-3, 2002, Pages 217-221

  Worschech, L ^a   Schliemann, A ^a   Reitzenstein, S ^a   Hartmann, P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

High frequency; Microwave; Nanoelectronic devices; Rectification

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; MICROWAVES; MODULATION; NANOSTRUCTURED MATERIALS; RECTIFYING CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; VOLTAGE CONTROL;

BALLISTIC NANOJUNCTIONS; MICROWAVE RECTIFICATIONS;

HETEROJUNCTIONS;

EID: 0036679907     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00604-4     Document Type: Conference Paper

References (14)