A high-efficiency GaN-based power amplifier employing inverse class-E topology

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 9, 2009, Pages 593-595

  Lee, Yong Sub ^a   Lee, Mun Woo ^a   Kam, Sang Ho ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Composite right left handed transmission line (CRLH TL); Efficiency; GaN HEMT; Harmonic; Inverse class E power amplifier (PA)

Indexed keywords

ACTIVE DEVICES; CLASS E; COMPOSITE RIGHT/LEFT-HANDED TRANSMISSION LINE (CRLH-TL); COMPOSITE RIGHT/LEFT-HANDED TRANSMISSION LINES; CONTINUOUS WAVE; DRAIN EFFICIENCY; EXPERIMENTAL VALIDATIONS; GAN HEMT; GAN HEMTS; HARMONIC; HARMONIC CONTROL; HIGH EFFICIENCY; INVERSE CLASS-E POWER AMPLIFIER (PA); MEASURED RESULTS; OUTPUT POWER; PARASITIC INDUCTANCES; POWER-ADDED EFFICIENCY; SHUNT INDUCTORS;

ELECTRIC LINES; GALLIUM NITRIDE; HARMONIC ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTANCE; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; THERMOLUMINESCENCE; TOPOLOGY; TRANSMISSION LINE THEORY;

GALLIUM ALLOYS;

EID: 70249107713     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2027095     Document Type: Article

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