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Volumn 50, Issue 11, 2008, Pages 2989-2992

A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency

Author keywords

Class E power amplifier; GaN HEMT; Harmonic termination; PAE

Indexed keywords

BROADBAND AMPLIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM;

EID: 53349157129     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.23803     Document Type: Article
Times cited : (10)

References (8)
  • 3
    • 50949119495 scopus 로고    scopus 로고
    • Design and implementation of an inverse class-F power amplifier with 79% efficiency by using a switch-based active device model
    • P. Aflaki, R. Negra, and F.M. Ghannouchi, Design and implementation of an inverse class-F power amplifier with 79% efficiency by using a switch-based active device model, IEEE Radio Wireless Symp (2008), 423-426.
    • (2008) IEEE Radio Wireless Symp , pp. 423-426
    • Aflaki, P.1    Negra, R.2    Ghannouchi, F.M.3
  • 5
    • 33645968991 scopus 로고    scopus 로고
    • Highly efficient LDMOS power amplifier base on class-E topology
    • J. Lee, S. Kim, J. Nam, J. Kim, I Kim, and B. Kim, Highly efficient LDMOS power amplifier base on class-E topology, Microwave Opt Technol Lett 48 (2006), 789-791.
    • (2006) Microwave Opt Technol Lett , vol.48 , pp. 789-791
    • Lee, J.1    Kim, S.2    Nam, J.3    Kim, J.4    Kim, I.5    Kim, B.6
  • 6
    • 0029378999 scopus 로고
    • The transmission-line high-efficiency class-E amplifier
    • T.B. Mader and Z.B. Popovic, The transmission-line high-efficiency class-E amplifier, IEEE Microwave Guided Wave Lett 5 (1995), 290292.
    • (1995) IEEE Microwave Guided Wave Lett , vol.5 , pp. 290292
    • Mader, T.B.1    Popovic, Z.B.2
  • 7
    • 34248149980 scopus 로고    scopus 로고
    • A high-efficiency class-E power amplifier using SiC MESFET
    • Y.S. Lee and Y.H. Jeong, A high-efficiency class-E power amplifier using SiC MESFET, Microwave Opt Technol Lett 49 (2007), 1447-1449.
    • (2007) Microwave Opt Technol Lett , vol.49 , pp. 1447-1449
    • Lee, Y.S.1    Jeong, Y.H.2
  • 8
    • 34547740520 scopus 로고    scopus 로고
    • A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications
    • Y.S. Lee and Y.H. Jeong, A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications, IEEE Microwave Wireless Compon Lett 17 (2007), 622-624.
    • (2007) IEEE Microwave Wireless Compon Lett , vol.17 , pp. 622-624
    • Lee, Y.S.1    Jeong, Y.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.