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Volumn 18, Issue 8, 2008, Pages 536-538
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Unequal-cells-based GaN HEMT doherty amplifier with an extended efficiency range
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Author keywords
Adjacent channel leakage ratio (ACLR); Doherty power amplifier (DPA); Efficiency; Gallium nitride (GaN); Wide band code division multiple access (WCDMA)
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Indexed keywords
GALLIUM NITRIDE;
POWER AMPLIFIERS;
SEMICONDUCTING GALLIUM;
ADJACENT CHANNEL LEAKAGE RATIO (ACLR);
DOHERTY AMPLIFIERS;
DOHERTY POWER AMPLIFIER;
DOHERTY POWER AMPLIFIER (DPA);
EFFICIENCY;
GALLIUM NITRIDE (GAN);
GAN-HEMT;
HIGH-EFFICIENCY;
OUTPUT POWERS;
SATURATION POWER;
WIDE-BAND CODE DIVISION MULTIPLE ACCESS (WCDMA);
GALLIUM ALLOYS;
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EID: 49249112377
PISSN: 15311309
EISSN: None
Source Type: Journal
DOI: 10.1109/LMWC.2008.2001015 Document Type: Article |
Times cited : (46)
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References (6)
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