Highly efficient Doherty amplifier based on class-E topology for WCDMA applications

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 9, 2008, Pages 608-610

  Lee, Yong Sub ^b   Lee, Mun Woo ^b   Jeong, Yoon Ha ^a,b  

^a IEEE

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Adjacent channel leakage ratio (ACLR); Class E power amplifier; Doherty amplifier; Efficiency; Gallium nitride (GaN); Wideband code division multiple access (WCDMA)

Indexed keywords

BINARY SEQUENCES; CIVIL AVIATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; POWER AMPLIFIERS; TOPOLOGY;

ADJACENT CHANNEL LEAKAGE RATIO; ADJACENT CHANNEL LEAKAGE RATIO (ACLR); APPLICATIONS.; BACK-OFF; CLASS-E; CLASS-E POWER AMPLIFIER; CONTINUOUS WAVE; DOHERTY AMPLIFIER; DOHERTY AMPLIFIERS; DOHERTY POWER AMPLIFIER; DRAIN EFFICIENCY; EFFICIENCY; GALLIUM NITRIDE (GAN); GAN HEMTS; HIGH-EFFICIENCY; HIGH-ELECTRON MOBILITY TRANSISTOR; HIGHLY EFFICIENT; POWER-ADDED-EFFICIENCY; WIDE-BAND CODE DIVISION MULTIPLE ACCESS; WIDEBAND CODE-DIVISION MULTIPLE ACCESS (WCDMA);

SEMICONDUCTING GALLIUM;

EID: 52049086454     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2008.2002460     Document Type: Article

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