On the mechanism of enhancement on electron field emission properties for ultrananocrystalline diamond films due to ion implantation

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Joseph, P T ^a   Tai, N H ^a   Chen, C H ^a   Niu, H ^a   Cheng, H F ^b   Pong, W F ^c   Lin, I N ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALING PROCESS; ELECTRON FIELD EMISSION PROPERTIES; ELECTRON TRANSFER; FIELD EMISSION PROPERTY; FIELD-EMISSION CHARACTERISTICS; GRAPHITIC PHASE; HIGH DOSE; INDUCED DEFECTS; LOW DOSE; N ION IMPLANTATION; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

DIAMOND FILMS; FIELD EMISSION; HEAVY IONS; ION BOMBARDMENT; NANOCRYSTALLINE MATERIALS; POINT DEFECTS;

ION IMPLANTATION;

EID: 70149096393     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/105403     Document Type: Article

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