Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 9-10

  Wang, X P ^a,b   Shen, C ^a,b   Li, Ming Fu ^a,b   Yu, H Y ^c   Sun, Yiyang ^a   Feng, Y P ^a   Lim, Andy ^a   Sik, Hwang Wan ^a   Chin, Albert ^d   Yeo, Y C ^a   Lo, Patrick ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; LANTHANUM COMPOUNDS; MOSFET DEVICES; RAPID PROTOTYPING; SILICON ON INSULATOR TECHNOLOGY;

DUAL METAL GATES; FERMI-PINNING; FIRST-PRINCIPLES CALCULATIONS;

GATE DIELECTRICS;

EID: 41149167208     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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