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Volumn 9, Issue 9, 2009, Pages 4171-4175

High-density Se nanoneedles having no catalyst tips quasi-vertically grown on quartz substrates via destructive thermal evaporation

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EID: 70049086842     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg900411d     Document Type: Article
Times cited : (15)

References (42)
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    • 70049110460 scopus 로고    scopus 로고
    • The deposition rate of (SnSe2)Nb vapor strongly depends on Ar gas pressure. Qualitatively, within the frame of classical nucleation theory, the number of collisions between deposited atoms and Ar atoms is proportional to the vapor pressure of the background gas; hence, a higher pressure yields a lower mean free path
    • The deposition rate of (SnSe2)Nb vapor strongly depends on Ar gas pressure. Qualitatively, within the frame of classical nucleation theory, the number of collisions between deposited atoms and Ar atoms is proportional to the vapor pressure of the background gas; hence, a higher pressure yields a lower mean free path.
  • 42
    • 0017545232 scopus 로고
    • From the viewpoint of activation energy, a higher growth rate along the c-axis and a lower one perpendicular to the c-axis give Se nanowires that grow preferentially along the unique [001 ] direction. To favor the stronger covalent bonds in helical chains over the relatively weak van der Waals forces between chains, the growth rate along the [001] direction should be faster relative to that along the [010] and [100] directions. In the early stage of Se ID nanoneedle formation, to reduce the total surface free energy, the Se atoms prefer to stack along one direction, which, makes f-Se an ideal building block for generating ID nanostructures without the assistance of templates
    • From the viewpoint of activation energy, a higher growth rate along the c-axis and a lower one perpendicular to the c-axis give Se nanowires that grow preferentially along the unique [001 ] direction. To favor the stronger covalent bonds in helical chains over the relatively weak van der Waals forces between chains, the growth rate along the [001] direction should be faster relative to that along the [010] and [100] directions. See Murphy, K. E.; Altaian, M. B.; Wunderlich, B. J. Appl. Phys. 1977,48,4122. In the early stage of Se ID nanoneedle formation, to reduce the total surface free energy, the Se atoms prefer to stack along one direction, which, makes f-Se an ideal building block for generating ID nanostructures without the assistance of templates.
    • (1977) J. Appl. Phys. , vol.48 , pp. 4122
    • Murphy, K.E.1    Altaian, M.B.2    Wunderlich, B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.