Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 18, 2009, Pages 2987-2990

  Ebm, Christoph ^a   Hobler, Gerhard ^b  

^a Nanofabrication AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Binary collision simulation; Focused ion beam; Gas assisted deposition; Ion milling; Multi ion beam system; Sputtering; Topography simulation

Indexed keywords

ANGLE OF INCIDENCE; BINARY COLLISION SIMULATION; ION BEAM INDUCED DEPOSITION; ION BEAM PROCESS; ION MILLING; MULTI ION BEAM-SYSTEM; NONLOCAL MODELS; REDEPOSITION; SPUTTERED ATOMS; TOPOGRAPHY SIMULATION;

ANGULAR DISTRIBUTION; ATOMS; BEAM PLASMA INTERACTIONS; FOCUSED ION BEAMS; ION BOMBARDMENT; IONS; MILLING (MACHINING); PLASMAS; SPUTTERING; SURFACE TOPOGRAPHY;

ION BEAM ASSISTED DEPOSITION;

EID: 69949176883     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.014     Document Type: Article

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