Integrated hydrogen-sensing amplifier with Schottky-type diode and InGaP-GaAs heterojunction bipolar transistor

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 898-900

  Chiu, Shao Yen ^a   Tsai, Jung Hui ^b   Huang, Hsuan Wei ^a   Liang, Kun Chieh ^a   Tsai, Tzung Min ^a   Hsu, Kuo Yen ^a   Lour, Wen Shung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Bipolar; Heterojunction; Hydrogen sensor; InGaP GaAs; Schottky diode

Indexed keywords

BIPOLAR; COLLECTOR CURRENTS; COMMON EMITTER; CURRENT GAINS; GAAS; HYDROGEN SENSOR; HYDROGEN-SENSING; IN-SITU; INGAP-GAAS; INGAP-GAAS HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED HYDROGEN; OUTPUT SIGNAL; POWER CONSUMPTION; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY DIODE; SENSING CHARACTERISTICS; STANDBY MODE; TYPE STRUCTURES;

AMPLIFIERS (ELECTRONIC); BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; DIODES; GALLIUM ALLOYS; HETEROJUNCTIONS; HYDROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SENSORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 69949159302     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2025894     Document Type: Article

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