Finite element power diode model optimized through experiment-based parameter extraction

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 22, Issue 5, 2009, Pages 351-367

  Chibante, R ^a   Araujo A ^b   Carvalho, A ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

Ambipolar diffusion equation; Device simulation; Finite element method; Modeling; Optimization; Parameter extraction; SPICE

Indexed keywords

ACCURATE MODELING; AMBIPOLAR DIFFUSION EQUATION; APPROXIMATE SOLUTION; CIRCUIT SIMULATORS; CLASSICAL METHODS; DEVICE SIMULATION; EFFICIENT DESIGNS; EXECUTION TIME; EXPERIMENTAL VALIDATIONS; EXTRACTION PROCEDURE; FINITE ELEMENT; HYBRID APPROACH; MODELING; OPTIMIZATION ALGORITHMS; PARAMETER-EXTRACTION METHOD; PHYSICS-BASED; PHYSICS-BASED MODELS; POWER CIRCUIT; POWER DIODE; VARIATIONAL FORMULATION; WAVEFORM MEASUREMENT;

BIPOLAR SEMICONDUCTOR DEVICES; CIRCUIT SIMULATION; DIFFUSION; DIODES; PARAMETER EXTRACTION; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SIMULATED ANNEALING; SIMULATORS; SPICE;

FINITE ELEMENT METHOD;

EID: 69949124181     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.708     Document Type: Article

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