Annealing effects on the structure and optical properties of GeSe2 and GeSe4 films prepared by PLD

Journal of Alloys and Compounds

Volumn 484, Issue 1-2, 2009, Pages 645-648

  Pan, R K ^a,b   Tao, H Z ^a   Zang, H C ^a   Zhao, X J ^a   Zhang, T J ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b HUBEI UNIVERSITY   (China)

Author keywords

Annealing; GeSe2 film; GeSe4 film; Optical properties; Pulsed laser deposition

Indexed keywords

ABSORPTION EDGES; AMORPHOUS THIN FILMS; ANNEALING EFFECTS; AS-DEPOSITED FILMS; DIRECT TRANSITION; DISPERSION OF REFRACTIVE INDEX; DOMENICO MODEL; GESE2 FILM; GESE4 FILM; GLASS TRANSITION TEMPERATURE; HOMOPOLAR BONDS; OPTICAL TRANSMISSION SPECTRUM; POROUS STRUCTURES; RAMAN SPECTRA;

ABSORPTION; AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ANNEALING; FILM PREPARATION; GLASS TRANSITION; LASERS; LIGHT REFRACTION; LIGHT TRANSMISSION; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTOR LASERS; THIN FILMS;

OPTICAL FILMS;

EID: 69949092011     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.05.011     Document Type: Article

References (30)

1. Thakur A., Singh G., Saini G.S.S., Goyal N., and Tripathi S.K. Opt. Mater. 30 (2007) 565
2. Sedeek K., Adam A., Balboul M.R., Wahab L.A., and Makram N. Mater. Res. Bull. 43 (2008) 1355
3. Jemali N.A., Kassim H.A., Devi V.R., and Shrivastava K.N. J. Non-Cryst. Solids 354 (2008) 1744
4. Liu W.C., Hoffman G., Zhou W., Reano R.M., and Boolchand P. Appl. Phys. Lett. 93 (2008) 041107
5. Massobrio C., and Pasquarello A. Phys. Rev. B 77 (2008) 144207
6. Tang G., Yang Z., Luo L., and Chen W. J. Alloys Compd. 495 (2008) 472
7. Hafiz M.M., Othman A.A., El-Nahass M.M., and Al-Motasem A.T. Physica B 390 (2007) 348
8. Němec P., Frumar M., Frumarov B., Jelinek M., Lancok J., and Jedelsky J. Opt. Mater. 15 (2000) 191 and papers cited therein
9. Jarvis R.A., Wang R.P., Rode A.V., Zha C., and Davies B.L. J. Non-Cryst. Solids 353 (2007) 947
10. Xue M.Z., and Fu Z.W. J. Alloys Compd. 458 (2008) 351
11. Němec P., Takats V., Csik A., and Kokenyesi S. J. Non-Cryst. Solids 354 (2008) 5421
12. Němec P., and Frumar M. Thin Solid Films 516 (2008) 8377
13. Gutwirth J., Wágner T., Němec P., Kasap S.O., and Frumar M. J. Non-Cryst. Solids 354 (2008) 497
14. Frumar M., Frumarova B., Němec P., Wagner T., Jedelsky J., and Hrdlicka M. J. Non-Cryst. Solids 352 (2006) 544
15. Němec P., and Frumar M. J. Optoelectron. Adv. Mat. 5 (2003) 1047
16. Swanepoel R. J. Phys. E: Sci. Instrum. 16 (1983) 1214
17. Marquez E., Ramirez-Malo J.B., Villares P., Jimenez-Garay R., and Swanepoel R. Thin Solid Films 254 (1995) 83
18. Tauc J. Amorphous and Liquid Semiconductors (1974), Plenum, New York p.171
19. Mott N.F., and Davis E.A. Electronic Processes in Non-Crystalline Materials. second ed. (1979), Clarendon, Oxford p.289
20. Wemple S.H., and Di Domenico M. Phys. Rev. B 3 (1971) 1338
21. Street R.A., Nemanich R.J., and Connell G.A.N. Physical B 18 (1978) 690
22. El-Shazly O., and Hafiz M.M. J. Mater. Sci. 12 (2001) 395
23. Němec P., Jedelsky J., Frumar M., Stabl M., CernoSek Z., and Vlek M. Philos. Mag. 84 (2004) 877 and papers cited therein
24. El-Korashy A., El-Kabany N., and El-Zahed H. Physica B 365 (2005) 55
25. Němec P., Jedelsky J., Frumar M., Munzar M., Jelinek M., and Lancok J. J. Non- Cryst. Solids 326-327 (2003) 53 and papers cited therein
26. Mytilineou E., Chao B.S., and Papadimitriou D. J. Non-Cryst. Solids 195 (1996) 279
27. Ikari T., Tanaka T., Ura K., Maeda K., and Futagami K. Phys. Rev. B 47 (1993) 4984
28. Kincl M., and Tichy L. Mater. Chem. Phys. 110 (2008) 322
29. Kuzukawa Y., Ganjoo A., and Shimakawa K. J. Non-Cryst. Solids 227-230 (1998) 715
30. Rajagopalan S., Harshvardhan K.S., Malhotra I.K., and Chopra K.I. J. Non-Cryst. Solids 50 (1982) 29