Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties

Journal of Non-Crystalline Solids

Volumn 353, Issue 8-10, 2007, Pages 947-949

  Jarvis, R A ^a   Wang, R P ^a   Rode, A V ^a   Zha, C ^a   Luther Davies, B ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Chalcogenides; Composition; Dielectric properties; Ge33As12Se55; Laser deposition; Raman spectroscopy; Thermal evaporation; Thin films

Indexed keywords

ARSENIC; CHALCOGENIDES; DIELECTRIC PROPERTIES; GERMANIUM; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SELENIUM; THERMAL EVAPORATION;

FILM COMPOSITION; LASER DEPOSITION; ULTRA FAST PULSED LASER DEPOSITION;

THIN FILMS;

EID: 33947216810     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.12.079     Document Type: Article

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