Photoinduced structural changes in obliquely deposited As- and Ge-based amorphous chalcogenides: Correlation between changes in thickness and band gap

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 715-718

  Kuzukawa, Y ^a   Ganjoo, Ashtosh ^a,b   Shimakawa, K ^a  

^a GIFU UNIVERSITY   (Japan)

^b YM Systems Inc   (Japan)

Author keywords

Band gap; Chalcogenide films; Illumination; Thickness

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ARSENIC COMPOUNDS; ENERGY GAP; LIGHT SENSITIVE MATERIALS; OPTICAL FILMS; OPTICAL GLASS; PHOTOCHROMISM; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SULFUR COMPOUNDS;

CHALCOGENIDES;

SEMICONDUCTING GLASS;

EID: 0032065124     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00192-6     Document Type: Article

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