Numerical simulation of 405-nm InGaN laser diodes with polarization matched AlGaInN electron-blocking layer and barrier layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7211, Issue , 2009, Pages

  Kuo, Yen Kuang ^a   Lu, Ying Chung ^a   Tsai, Miao Chan ^a   Yen, Sheng Horng ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

Laser diodes; Numerical simulation; Piezoelectric effect; Polarization matching

Indexed keywords

ALGAINN; BARRIER LAYERS; BLOCKING LAYERS; COMPOUND MATERIALS; EFFECTIVE POTENTIALS; ELECTRON LEAKAGES; ELECTROSTATIC FIELDS; III NITRIDES; INGAN LASER DIODES; INTEGRATED PROGRAMS; LASER DIODES; LASER PERFORMANCE; LASER TECHNOLOGIES; MULTIPLE-QUANTUM-WELL LASER DIODES; NUMERICAL SIMULATION; OPTICAL CHARACTERISTICS; PIEZOELECTRIC EFFECT; PIEZOELECTRIC POLARIZATIONS; POLARIZATION MATCHING; SIMULATION PROGRAMS; SIMULATION RESULTS; SLOPE EFFICIENCIES; THRESHOLD CURRENTS; VIOLET LASER DIODES;

ALUMINUM; COMPUTER SIMULATION; DIODES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; ELECTROOPTICAL DEVICES; LASERS; NITRIDES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION;

MATHEMATICAL MODELS;

EID: 65349134881     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808861     Document Type: Conference Paper

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