Electronic structure of Fe-doped In2 O3 magnetic semiconductor with oxygen vacancies: Evidence for F -center mediated exchange interaction

Applied Physics Letters

Volumn 91, Issue 26, 2007, Pages

  Hu, Shu Jun ^b   Yan, Shi Shen ^a   Lin, Xue Ling ^b   Yao, Xin Xin ^b   Chen, Yan Xue ^b   Liu, Guo Lei ^b   Mei, Liang Mo ^b  

^a SHANDONG UNIVERSITY   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DISTRIBUTION; ELECTRONIC STRUCTURE; EXCHANGE INTERACTIONS; MAGNETIC PROPERTIES; OXYGEN VACANCIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

FERROMAGNETIC COUPLING; FERROMAGNETIC EXCHANGE;

MAGNETIC SEMICONDUCTORS;

EID: 37549061383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828041     Document Type: Article

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