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1
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51849145299
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Year-in-Review on radiation-induced soft error rate
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San Jose, CA, Mar.
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P. Roche, "Year-in-Review on radiation-induced soft error rate," in IEEE Int. Reliability Phys. Symp., San Jose, CA, Mar. 2006.
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IEEE Int. Reliability Phys. Symp.
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Roche, P.1
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2
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29344472607
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Radiation-Induced soft errors in advanced semiconductor technologies
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R. C. Baumann, "Radiation-Induced soft errors in advanced semiconductor technologies," IEEE Trans. Device Mater. Reliab., vol.5, no.3, pp. 305-316, 2005.
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Baumann, R.C.1
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Soft errors: Technology trends, system effects and protection techniques
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S. Mitra, P. Sanda, and N. Seifert, "Soft errors: Technology trends, system effects and protection techniques," presented at the IEEE VLSI Test Symp. 2008.
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IEEE VLSI Test Symp
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Mitra, S.1
Sanda, P.2
Seifert, N.3
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5
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51549107392
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Multi-cell upset probabilities of 45 nm high-fc+ metal gate SRAM devices in terrestrial and space environments
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N. Seifert, B. Gill, K. Foley, and P. Relangi, "Multi-cell upset probabilities of 45 nm high-fc+ metal gate SRAM devices in terrestrial and space environments," in IEEE Int. Reliability Phys. Symp. (IRPS), 2008, pp. 181-186.
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Seifert, N.1
Gill, B.2
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Relangi, P.4
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33846310741
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Alpha-Induced multiple cell upsets in standard and radiation hardened SRAMs manufactured in a 65 nm CMOS technology
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G. Gasiot et al., "Alpha-Induced multiple cell upsets in standard and radiation hardened SRAMs manufactured in a 65 nm CMOS technology," IEEE Trans. Nucl. Sci., vol.53, pt. 1, pp. 3479-3486, 2006.
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IEEE Trans. Nucl. Sci.
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Gasiot, G.1
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7
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33846310741
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Multiple cell upsets as the key contribution to the total ser of 65 nm CMOS SRAMs and its dependence on well engineering
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G. Gasiot, D. Giot, and P. Roche, "Multiple cell upsets as the key contribution to the total SER of 65 nm CMOS SRAMs and its dependence on well engineering," IEEE Trans. Nucl. Set, vol.54, pt. Part 1, pp. 3479-3486, 2006.
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IEEE Trans. Nucl. Sci.
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Gasiot, G.1
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34548103489
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Multiple bit upset analysis in 90 nm SRAMs: Heavy ions testing and 3D simulations
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D. Giot, P. Roche, G. Gasiot, and R. Harboe-Sørensen, "Multiple bit upset analysis in 90 nm SRAMs: Heavy ions testing and 3D simulations," IEEE Trans. Nucl. Sci., vol.54, pp. 904-911, 2007.
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53349156731
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Ion testing and 3D simulations of multiple cell upset in 65 nm standard SRAMs
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D. Giot, P. Roche, G. Gasiot, J.-L. Autran, and R. Harboe- Sørensen, "Ion testing and 3D simulations of multiple cell upset in 65 nm standard SRAMs," IEEE Trans. Nucl. Sci., vol.55, pp. 2048-2054, 2008.
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10
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69549142984
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JEDEC Standard Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices Arlington, VA, JESD89 [Online]. Available:
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"JEDEC Standard Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices" JEDEC Solid State Technol. Assoc., Arlington, VA, JESD89 [Online]. Available: http://www.jedec.org/down-load/search/JESD89A.pdf
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JEDEC Solid State Technol. Assoc.
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11
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34548063404
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Altitude see test European platform (ASTEP) and first results in CMOS 130 nm SRAM
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J. L. Autran, P. Roche, J. Borel, C. Sudre, K. Castellani-Coulié, D. Munteanu, T. Parrassin, G. Gasiot, and J. P. Schoellkopf, "Altitude see test European platform (ASTEP) and first results in CMOS 130 nm SRAM," IEEE Trans. Nucl. Sci., vol.54, pp. 1002-1009, 2007.
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Munteanu, D.6
Parrassin, T.7
Gasiot, G.8
Schoellkopf, J.P.9
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12
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51849083133
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Real-time soft-error rate testing of semiconductor memories on the European test platform ASTEP
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Giens, France
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J. L. Autran, P. Roche, G. Gasiot, T. Parrassin, J. P. Schoellkopf, and J. Borel, "Real-time soft-error rate testing of semiconductor memories on the European test platform ASTEP," in Proc. 2nd Int. Conf. on Memory Technol. and Design (ICMTD 2007), Giens, France, 7-10, 2007, pp. 161-164.
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Proc. 2nd Int. Conf. on Memory Technol. and Design (ICMTD 2007)
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51849136000
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Real-Time neutron and alpha soft-error rate testing of CMOS 130 nm SRAM: Altitude versus underground measurements
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Presented at the Grenoble, France, Jun.
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J. L. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo, and J. Borel, "Real-Time neutron and alpha soft-error rate testing of CMOS 130 nm SRAM: Altitude versus underground measurements," presented at the IEEE Proc. Int. Conf. on IC Design and Technol., Grenoble, France, Jun. 2-4, 2008.
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Boron compounds as a dominant source of alpha particles in semiconductor devices
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69549101050
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[Online]. Available:http://www.synopsys.com/products/tcad/tcad.html
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69549099555
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iRoC Technologies Website [Online]. Available
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Neutron monitor design improvments
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[Online]. Available: http://www.seutest.com/FluxCalculation.htm
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An atmospheric radiation model based on response matrices generated by detailed Monte Carlo simulations of cosmic ray interactions
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Improvement to and validations of the qinetiq atmospheric radiation model (QARM)
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Comparison between neutron-induced system-SER and accelerated-SER in SRAMs
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Phoenix, USA
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Modeling of digital devices and ICs submitted to transient irradiations
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