Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2955-2960

  Wu, Z H ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); CURRENT DENSITY; DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MATHEMATICAL MODELS; METALLIC FILMS; SENSORS; SILICON;

ELECTRON CONCENTRATION; EQUILIBRIUM LEVEL; SENSOR RESISTANCE; TRANSPORT EQUATION;

CARRIER MOBILITY;

EID: 4944230182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774266     Document Type: Article

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