Comparison of thermal reactions of phosphine on Ge(1 0 0) and Si(1 0 0) by high-resolution core-level photoemission

Surface Science

Volumn 482-485, Issue PART 1, 2001, Pages 654-658

  Tsai, Hsin Wen ^a   Lin, Deng Sung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical vapor deposition; Germanium; Phosphine; Photoemission (total yield); Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; PHOTOEMISSION; PYROLYSIS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION;

HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSIONS; PHOSPHINES;

HETEROJUNCTIONS;

EID: 0035918931     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00783-X     Document Type: Conference Paper

References (17)