STM studies of the initial stages of growth of Sb on Si(100) surfaces

Surface Science

Volumn 423, Issue 1, 1999, Pages 43-52

  Garni, B ^a   Kravchenko, I I ^a   Salling, C T ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; STRAIN; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

SCANNING TUNNELING SPECTROSCOPY (STS);

SEMICONDUCTING SILICON;

EID: 0033100657     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00888-7     Document Type: Article

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