메뉴 건너뛰기




Volumn 4, Issue , 2002, Pages 2585-2591

Investigation of parallel operation of IGBTs

Author keywords

Discrete devices; IGBT; Module devices; Parallel operation; Standarized converters; Switching effects

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONVERTERS; ELECTRIC POWER SYSTEMS; POWER ELECTRONICS; SWITCHING;

EID: 0036443312     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (41)

References (21)
  • 1
    • 0029501674 scopus 로고
    • Multilevel converters - A new breed of power converters
    • J.S. Lai and F.Z. Peng, "Multilevel converters - a new breed of power converters," IEEE Ind. Applicat., vol. 3, pp. 2348-2356, 1995.
    • (1995) IEEE Ind. Applicat. , vol.3 , pp. 2348-2356
    • Lai, J.S.1    Peng, F.Z.2
  • 3
    • 0034313447 scopus 로고    scopus 로고
    • Recent developments of high power conveners for industry and traction applications
    • Nov.
    • S. Bernet, "Recent developments of high power conveners for industry and traction applications," IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1102-1117, Nov. 2000.
    • (2000) IEEE Trans. Power Electron. , vol.15 , Issue.6 , pp. 1102-1117
    • Bernet, S.1
  • 6
    • 0027798311 scopus 로고
    • Are paralleled IGBT modules or paralleled IGBT inverters the better choice?
    • C. Keller and Y. Tadros, "Are paralleled IGBT modules or paralleled IGBT inverters the better choice?," European Power Electronics Conf., vol. 5, pp. 1-6, 1993.
    • (1993) European Power Electronics Conf. , vol.5 , pp. 1-6
    • Keller, C.1    Tadros, Y.2
  • 7
    • 0027847250 scopus 로고
    • Paralleling of semiconductors including temperature feedback, using spreadsheet or simulation tool, to calculate current and temperature differences
    • T. Rogne, O. Mo, and M. Schlürscheid, "Paralleling of semiconductors including temperature feedback, using spreadsheet or simulation tool, to calculate current and temperature differences," European Power Electronics Conf., vol. 2, pp. 149-154, 1993.
    • (1993) European Power Electronics Conf. , vol.2 , pp. 149-154
    • Rogne, T.1    Mo, O.2    Schlürscheid, M.3
  • 8
    • 0042876929 scopus 로고    scopus 로고
    • Soft Punch Through (SPT) - Setting new standards in 1200V IGBT
    • Nürnberg, Germany
    • S. Dewar, S. Linder, C. von Arx, A. Mukhitinov, and G. Debled, "Soft Punch Through (SPT) - Setting new Standards in 1200V IGBT," Proc. PCIM'00, Nürnberg, Germany, 2000.
    • (2000) Proc. PCIM'00
    • Dewar, S.1    Linder, S.2    Von Arx, C.3    Mukhitinov, A.4    Debled, G.5
  • 9
    • 0003339353 scopus 로고    scopus 로고
    • Novel Soft-Punch-Through (SPT) 1700V IGBT sets benchmark on technology curve
    • Nürnberg, Germany
    • M. Rahimo, et al., "Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve," Proc. PCIM'01, Nürnberg, Germany, 2001.
    • (2001) Proc. PCIM'01
    • Rahimo, M.1
  • 10
    • 84961720238 scopus 로고    scopus 로고
    • Dynamic behaviour of new IGBT and EMCON-diodes for low and high voltage applications
    • L. Lorenz, "Dynamic behaviour of new IGBT and EMCON-diodes for low and high voltage applications," Power Cony. Conf., vol. 1, pp. 240-247, 2002.
    • (2002) Power Cony. Conf. , vol.1 , pp. 240-247
    • Lorenz, L.1
  • 11
    • 0001520716 scopus 로고    scopus 로고
    • The future of power semiconductor device technology
    • June
    • B.J. Baliga, "The Future of Power Semiconductor Device Technology," IEEE, vol. 89, no. 6, pp. 822-832, June 2001.
    • (2001) IEEE , vol.89 , Issue.6 , pp. 822-832
    • Baliga, B.J.1
  • 12
    • 0029748233 scopus 로고    scopus 로고
    • Paralleling intelligent IGBT power modules with active gate-controlled current balancing
    • P. Hofer, N. Karrer, and C. Gerster, "Paralleling intelligent IGBT power modules with active gate-controlled current balancing," IEEE Power Electronics Specialists Conf., vol. 2, page 1312-1316, 1996.
    • (1996) IEEE Power Electronics Specialists Conf. , vol.2 , pp. 1312-1316
    • Hofer, P.1    Karrer, N.2    Gerster, C.3
  • 13
    • 0032650917 scopus 로고    scopus 로고
    • Monitoring of paralleled IGBT/diode modules
    • May
    • P. Hofer-Noser and N. Karrer, "Monitoring of Paralleled IGBT/Diode Modules," IEEE Trans. Power Electron., vol. 14, no. 3, pp. 438-444, May 1999.
    • (1999) IEEE Trans. Power Electron. , vol.14 , Issue.3 , pp. 438-444
    • Hofer-Noser, P.1    Karrer, N.2
  • 14
    • 0011837937 scopus 로고    scopus 로고
    • Active gate control for parallel operation of IGBT devices
    • Virginia Tech., April
    • J.J. Nelson and G. Venkataramanan, "Active Gate Control for Parallel Operation of IGBT Devices," Center Power Electron. Syst. Seminar, Virginia Tech., pp. 471-477, April 2002.
    • (2002) Center Power Electron. Syst. Seminar , pp. 471-477
    • Nelson, J.J.1    Venkataramanan, G.2
  • 15
    • 0030386531 scopus 로고    scopus 로고
    • Current sharing for paralleled IGBT's using statistics method
    • C. Wong and K. Priest, "Current Sharing for Paralleled IGBT's Using Statistics Method," IEEE Ind. Applicat., vol. 3, pp. 1418-1424, 1996.
    • (1996) IEEE Ind. Applicat. , vol.3 , pp. 1418-1424
    • Wong, C.1    Priest, K.2
  • 16
    • 0026835179 scopus 로고
    • Static and dynamic behaviour of paralleled IGBT's
    • March-April
    • R. Letor, "Static and Dynamic Behaviour of Paralleled IGBT's," IEEE Trans. Ind. Applicat., vol. 28, no. 2, pp. 395-402, March-April 1992.
    • (1992) IEEE Trans. Ind. Applicat. , vol.28 , Issue.2 , pp. 395-402
    • Letor, R.1
  • 17
    • 4243290386 scopus 로고    scopus 로고
    • Powerex Application Note
    • Powerex Inc., "Using IGBT Modules," Powerex Application Note, pp. A50-A54.
    • Using IGBT Modules
  • 18
    • 0011841909 scopus 로고    scopus 로고
    • International Rectifier Application Note AN-990
    • International Rectifier, Inc., "Application Characterization of IGBTs," International Rectifier Application Note AN-990.
    • Application Characterization of IGBTs
  • 20
    • 0034474531 scopus 로고    scopus 로고
    • Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents
    • B. Gutsmann, P. Mourick, and D. Silber, "Exact Inductive Parasitic Extraction for Analysis of IGBT Parallel Switching including DCB-Backside Eddy Currents," IEEE Power Electronics Specialists Conf., vol. 3, pp. 1291-1295, 2000.
    • (2000) IEEE Power Electronics Specialists Conf. , vol.3 , pp. 1291-1295
    • Gutsmann, B.1    Mourick, P.2    Silber, D.3
  • 21
    • 0033877805 scopus 로고    scopus 로고
    • Neutral-point-clamped inverter with parallel driving of IGBT's for industrial applications
    • Jan.-Feb.
    • H. Miyazaki, H. Fukumoto, S. Sugiyama, M. Tachikawa, and N. Azusawa, "Neutral-Point-Clamped Inverter with Parallel Driving of IGBT's for Industrial Applications," IEEE Trans. Ind. Applicat., vol. 36, no. 1, pp. 146-151, Jan.-Feb. 2000.
    • (2000) IEEE Trans. Ind. Applicat. , vol.36 , Issue.1 , pp. 146-151
    • Miyazaki, H.1    Fukumoto, H.2    Sugiyama, S.3    Tachikawa, M.4    Azusawa, N.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.