An experimental and numerical investigation of igbt blocking characteristics

Proceedings - IPEMC 2000: 3rd International Power Electronics and Motion Control Conference

Volumn 1, Issue , 2000, Pages 407-411

  Huang, S ^a   Sheng, K ^a   Amaratunga, G A J ^a   Udrea, F ^a   Waind, P ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

Break down; IGBT; Impact ionization

Indexed keywords

AMPLIFICATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOTION CONTROL; NEGATIVE RESISTANCE; POWER CONTROL; POWER ELECTRONICS;

BIPOLAR CURRENTS; BREAK DOWN; BREAKDOWN CHARACTERISTICS; BREAKDOWN CURVES; IGBT DEVICES; NEGATIVE CHARGE; NUMERICAL INVESTIGATIONS; SELF-HEATING EFFECT;

IMPACT IONIZATION;

EID: 51549092838     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEMC.2000.885438     Document Type: Conference Paper

References (3)

1. H. Hagino et al, "An experimental and Numerical Study on the Forward Biased SOA of IGBT's", IEEE Trans. Electron Devices, vol. 43, p.490, 1996.
2. H. Nishium et al, "High voltage high power transistor modules for 440 V AC line voltage inverter application, " Conf.Rec.IPEC-Tokyo, 83, p.297, 1983.
3. T. Puritis, "Light and heavy charge carrier caused breakdown of silicon p-n junction", Proceedings of the International Conference, CAS, p.353, 1996.