Analysis of humidity effects on the degradation of high-power white LEDs

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1226-1230

  Tan, Cher Ming ^a,b   Eric Chen, Boon Khai ^b   Xu, Gan ^c   Liu, Yuanjie ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c Agency for Science   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE MECHANISM; HIGH-POWER; HUMIDITY EFFECTS; NON DESTRUCTIVE; PARAMETERS EXTRACTION; PHYSICAL FAILURE ANALYSIS; STATISTICAL DISTRIBUTION; WHITE LED; WHITE LIGHT EMITTING DIODES;

DEGRADATION; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMITTING DIODES; MOISTURE; ORGANIC LIGHT EMITTING DIODES (OLED); SAFETY FACTOR; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

QUALITY ASSURANCE;

EID: 69249213968     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.005     Document Type: Article

References (11)

1. Tan CM, Chen B, Foo YY, Chan RY, Xu G, Liu YJ. Humidity effect on the degradation of packaged ultra-bright white LEDs. In: 10th IEEE electronics packaging technology conference; 2008. p. 923-8.
2. Bando K., Sakano K., Noguchi Y., and Shimizu Y. Development of high-bright and pure-white LED lamps. J Light Vis Environ 22 (1998) 2-5
3. Meneghini M., and Meneghesso G. A review on the reliability of GaN-based LEDs. IEEE Trans Dev Mater Reliab 8 (2008) 323
4. Moisture/reflow sensitivity classification for nonhermetic solid state surface mount devices. IPC/JEDEC J-STD-020D; 2007.
5. Tan C.M., and Raghavan N. Unveiling the electromigration physics of ULSI interconnects through statistics. Semicond Sci Technol 22 (2007) 941-946
6. Tan C.M., and Raghavan N. An approach to statistical analysis of gate oxide breakdown mechanisms. Microelectron Reliab 47 (2007) 1336-1342
7. Tan C.M., Gan Z.H., Ho W.F., Chen S., and Liu R. Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications. Microelectron Reliab 45 (2005) 179-184
8. Dmitriev V.A. GaN based p-n structures grown on SiC substrates. MRS Int J Nitride Semiconduct 29 (1996)
9. Casey H.C., Muth J., Krishnankutty S., and Zavada J.M. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes. Appl Phys Lett 68 (1996) 2867-2869
10. Perlin P., Osinski M., Eliseev P.G., Smagley V.A., Mu J., Banas M., et al. Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes. Appl Phys Lett 69 (1996) 1680-1682
11. Chitnis A., Kumar A., Shatalov M., Adivarahan V., Lunev A., Yang J.W., et al. High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells. Appl Phys Lett 77 (2000) 3800