An approach to statistical analysis of gate oxide breakdown mechanisms

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1336-1342

  Tan, Cher Ming ^a   Raghavan, Nagarajan ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POWER DISTRIBUTION; MAXIMUM LIKELIHOOD; PROBABILITY; SIMULATED ANNEALING; STATISTICAL METHODS;

EXPECTATION-MAXIMIZATION (EM) ALGORITHM; FAILURE DATA; MULTI-CENSORED GATE OXIDES;

GATE DIELECTRICS;

EID: 34548730796     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.011     Document Type: Article

References (8)

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