GaN based p-n structures grown on SiC substrates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Dmitriev, V A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON BEAMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH KINETICS; HETEROJUNCTIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SILICON CARBIDE;

CONTACT RESISTANCE; IMPURITY GRADIENT; SCHOTTKY BARRIERS; TEMPERATURE COEFFICIENT;

SEMICONDUCTOR JUNCTIONS;

EID: 4043117675     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002015     Document Type: Article

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