Room temperature ferromagnetism in Ni-doped ZnO films

Current Applied Physics

Volumn 10, Issue 1, 2010, Pages 124-128

  Hou, Deng Lu ^a   Zhao, Rui Bin ^a,b   Wei, Yan Yan ^a   Zhen, Cong Mian ^a   Pan, Cheng Fu ^a   Tang, Gui De ^a  

^a HEBEI NORMAL UNIVERSITY   (China)

^b HEBEI MEDICAL UNIVERSITY   (China)

Author keywords

Oxygen vacancy; Photoluminescence; Room temperature ferromagnetism; ZnO

Indexed keywords

C-AXIS ORIENTATIONS; CHARGE STATE; MAGNETIZATION MEASUREMENTS; NI-DOPED; OXYGEN VACANCY LEVEL; ROOM TEMPERATURE FERROMAGNETISM; WURTZITE STRUCTURE; X- RAY DIFFRACTION; ZNO;

ARGON; FERROMAGNETISM; MAGNETS; NICKEL; OXYGEN; PHOTOLUMINESCENCE; SATURATION MAGNETIZATION; SEMICONDUCTING ZINC COMPOUNDS; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

OXYGEN VACANCIES;

EID: 69249211123     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.05.007     Document Type: Article

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