Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

Science in China, Series E: Technological Sciences

Volumn 46, Issue 6, 2003, Pages

  Chen, Jun ^a,b   Zhang, Shuming ^b   Zhang, Baoshun ^b   Zhu, Jianjun ^b   Feng, Gan ^b   Duan, Lihong ^b   Wang, Yutian ^b   Yang, Hui ^b   Zheng, Wenchen ^a  

^a SICHUAN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Gallium nitride; In situ laser reflectometry; MOCVD

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; MEASUREMENT THEORY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY;

GROWTH PRESSURE; IN SITU LASER REFLECTOMETRY;

BUFFER LAYERS;

EID: 34147095988     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1360/03ye0038     Document Type: Article

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