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Electrochemical and Solid-State Letters

Volumn 12, Issue 10, 2009, Pages

InGaN-based light-emitting diodes with a multiple-air-gap layer

(6) Lin, Chia Feng a Yang, Chung Chieh a Lin, Chun Min a Chen, Kuei Ting a Hu, Chih Wei b Tsayb, Jenq Dar b

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AIR-GAPS; BLUE SHIFT; ELECTROLUMINESCENCE SPECTRUM; EPITAXIAL LATERAL OVERGROWTH; GAN TEMPLATE; INGAN/GAN; INJECTION CURRENTS; LED STRUCTURE; LIGHT-EXTRACTION EFFICIENCY; LIGHTEMITTING DIODE; MICROPHOTOLUMINESCENCE; MULTIPLE QUANTUM WELLS; NANOPOROUS GAN; OPERATING CURRENTS; PEAK INTENSITY; PHOTOELECTROCHEMICALS; PIEZO-ELECTRIC FIELDS; REVERSE-BIAS; SELF-ASSEMBLED; SI LAYER;

CURRENT DENSITY; DIODES; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS WELDING; LIGHT; LIGHT EMISSION; LIGHT TRANSMISSION; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SETTLING TANKS;

LIGHT EMITTING DIODES;

EID: 68949142361 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3177452 Document Type: Article

Times cited : (5)

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